Dae-Gyu Park: шукати на сайті Z-Library

Dae-Gyu Park, Tae-Kyun Kim

Рік:

2007

Мова:

english

Файл:

PDF, 988 KB

english, 2007

[IEEE 2010 International Workshop on Junction Technology (IWJT) - Shanghai, China (2010.05.10-2010.05.11)] 2010 International Workshop on Junction Technology Extended Abstracts - Sub-20 nm abrupt USJ formation with long ms-flash with sub-2 nm dopant motion control

Lee, K. L., Lauer, I., Ronsheim, P., Neumayer, D., McCoy, S., Kulkarni, P., Chan, J., Skordas, S., Zhu, Y., Gelpey, J., Park, Dae-gyu

Рік:

2010

Мова:

english

Файл:

PDF, 579 KB

english, 2010

ECS Transactions [ECS China Semiconductor Technology International Conference 2011 (CSTIC 2011) - Shanghai, China (March 13 - March 14, 2011)] - Leakage Engineering Enabling PDSOI Ring Oscillators Operating in Sub-100pA/[micro sign]m I

Ren, Zhibin, Cai, Jin, Robison, Robert R., Jagannathan, Basanth, Park, Dae-Gyu, Ning, Tak H.

Рік:

2011

Мова:

english

Файл:

PDF, 377 KB

english, 2011

Investigation of stress behaviors and mechanism of void formation in sputtered TiSix films

You-Seok Suh, Dae-Gyu Park, Se-Aug Jang

Журнал:

Thin Solid Films

Рік:

2004

Мова:

english

Файл:

PDF, 372 KB

english, 2004

Effects of fluorine and chlorine on the gate oxide integrity of W/TiN/SiO2/Si metal–oxide–semiconductor structure

Журнал:

Thin Solid Films

Рік:

2005

Мова:

english

Файл:

PDF, 529 KB

english, 2005

Liner schemes of the aluminum damascene interconnection for sub-0.2 μm line pitch metallization

Sam-Dong Kim, Dae-Gyu Park

Журнал:

Solid-State Electronics

Рік:

2003

Мова:

english

Файл:

PDF, 228 KB

english, 2003

Hydrodynamic behavior of iron ore particles in a circulating fluidized bed reduction system

Yoon-Bong Hahn, In-Sik Nam, Dae-Gyu Park, II-Ok Lee

Журнал:

Metals and Materials International

Рік:

1995

Мова:

english

Файл:

PDF, 1.13 MB

english, 1995

Characteristics of Si3N4/GaAs metal-lnsulator-semiconductor interfaces with coherent Si/Al0.3Ga0.7As interlayers

Dae-Gyu Park, Zhi Chen, Hadis Morkoç

Журнал:

Journal of Electronic Materials

Рік:

1997

Мова:

english

Файл:

PDF, 787 KB

english, 1997

Active-matrix liquid crystal display using solution-based organic thin film transistors on plastic substrates

Yong-Hoon Kim, Sung-Kyu Park, Dae-Gyu Moon, Won-Keun Kim, Jeong-In Han

Журнал:

Displays

Рік:

2004

Мова:

english

Файл:

PDF, 233 KB

english, 2004

Flexible metal–insulator–metal (MIM) devices for plastic film AM-LCD

Sung-Jei Hong, Chan-Jae Lee, Jeong-In Han, Won-Keun Kim, Dae-Gyu Moon, Min-Gi Kwak, Sung-Kyu Park, Yong-Hoon Kim

Журнал:

Current Applied Physics

Рік:

2002

Мова:

english

Файл:

PDF, 309 KB

english, 2002

P-70: The Effect of Orthogonal Solvent of Colloidal Quantum Dots on QD-LED device

Yohan Kim, Se Min Kim, Hanho Park, Dae-gyu Moon, Jungwon Kang, Chul Jong Han

Журнал:

SID Symposium Digest of Technical Papers

Рік:

2012

Мова:

english

Файл:

PDF, 348 KB

english, 2012

A Comparison of Short-Channel Control in Planar Bulk and Fully Depleted Devices

Muralidhar, R., Jin Cai, Lauer, I., Chan, K., Kulkarni, P., Young-Hee Kim, Zhibin Ren, Dae-Gyu Park, Oldiges, P., Shahidi, G.

Журнал:

IEEE Electron Device Letters

Рік:

2012

Мова:

english

Файл:

PDF, 453 KB

english, 2012

[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Complementary thin-base symmetric lateral bipolar transistors on SOI

Jin Cai,, Ning, Tak H., D'Emic, Chris, Chan, Kevin K., Haensch, Wilfried E., Jeng-Bang Yau,, Park, Dae-Gyu

Рік:

2011

Мова:

english

Файл:

PDF, 603 KB

english, 2011

Electrical characteristics and thermal stability of n[sup +] polycrystalline- Si/ZrO[sub 2]/SiO[sub 2]/Si metalâoxideâsemiconductor capacitors

Lim, Kwan-Yong, Park, Dae-Gyu, Cho, Heung-Jae, Kim, Joong-Jung, Yang, Jun-Mo, Choi, II-Sang, Yeo, In-Seok, Park, Jin Won

Журнал:

Balakrishnan, Karthik, Hashemi, Pouya, Ott, John A., Leobandung, Effendi, Park, Dae-Gyu

Рік:

2002

Мова:

english

Файл:

PDF, 631 KB

english, 2002

[IEEE 2008 IEEE International SOI Conference - New Paltz, NY (2008.10.6-2008.10.9)] 2008 IEEE International SOI Conference - Will SOI have a life for the low-power market?

Cai, Jin, Ren, Zhibin, Majumdar, Amlan, Ning, Tak H., Yin, Haizhou, Park, Dae-Gyu, Haensch, Wilfried E.

Рік:

2008

Мова:

english

Файл:

PDF, 129 KB

english, 2008

[IEEE 2014 72nd Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2014.6.22-2014.6.25)] 72nd Device Research Conference - Measurement and analysis of gate-induced drain leakage in short-channel strained silicon germanium-on-insulator pMOS FinFETs

Рік:

2014

Мова:

english

Файл:

PDF, 450 KB

english, 2014

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density

Chen, Zhi, Park, Dae-Gyu, Stengal, Francke, Mohammad, S. Noor, Morkoç, Hadis

Журнал:

Zhang, Qintao, Wang, Cindy, Wang, Hailing, Schnabel, Christopher, Park, Dae-Gyu, Springer, Scott K., Leobandung, Effendi

Рік:

1996

Мова:

english

Файл:

PDF, 256 KB

english, 1996

Experimental Study of Gate-First FinFET Threshold-Voltage Mismatch

Журнал:

IEEE Transactions on Electron Devices

Рік:

2014

Мова:

english

Файл:

PDF, 2.06 MB

english, 2014

[IEEE 2000 Symposium on VLSI Technology. Digest of Technical Papers - Honolulu, HI, USA (13-15 June 2000)] 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) - Characteristics of Al/sub 2/O/sub 3/ gate dielectric prepared by atomic layer deposition for giga scale CMOS DRAM devices

Dae-Gyu Park,, Heung-Jae Cho,, Chan Lim,, In-Seok Yeo,, Jae-Sung Roh,, Chung-Tae Kim,, Jeong-Mo Hwang,

Рік:

2000

Мова:

english

Файл:

PDF, 223 KB

english, 2000

[IEEE 2011 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2011.04.25-2011.04.27)] Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications - FDSOI radiation dosimeters

Yau, Jeng-Bang, Gordon, Michael S., Rodbell, Kenneth P., Koester, Steven J., DeHaven, Patrick W., Park, Dae-Gyu, Haensch, Wilfried E.

Рік:

2011

Мова:

english

Файл:

PDF, 346 KB

english, 2011

Mechanism of V[sub FB]/V[sub TH] shift in Dysprosium incorporated HfO[sub 2] gate dielectric n-Type Metal-Oxide-Semiconductor devices

Lee, Tackhwi, Choi, Kisik, Ando, Takashi, Park, Dae-Gyu, Gribelyuk, Michael A., Kwon, Unoh, Banerjee, Sanjay K.

Журнал:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Рік:

2011

Мова:

english

Файл:

PDF, 1.00 MB

english, 2011

Boron penetration and thermal instability of p[sup +] polycrystalline-Si/ZrO[sub 2]/SiO[sub 2]/n-Si metal-oxide-semiconductor structures

Park, Dae-Gyu, Lim, Kwan-Yong, Cho, Heung-Jae, Kim, Joong-Jung, Yang, Jun-Mo, Ko, Jung-Kyu, Yeo, In-Seok, Park, Jin Won, de Waard, Henk, Tuominen, M.

Журнал:

Рік:

2002

Мова:

english

Файл:

PDF, 427 KB

english, 2002

Impact of atomic-layer-deposited TiN on the gate oxide quality of W/TiN/SiO[sub 2]/Si metal–oxide–semiconductor structures

Park, Dae-Gyu, Lim, Kwan-Yong, Cho, Heung-Jae, Cha, Tae-Ho, Yeo, In-Seok, Roh, Jae-Sung, Park, Jin Won

Журнал:

Рік:

2002

Мова:

english

Файл:

PDF, 327 KB

english, 2002

Suppressed boron penetration in p[sup +] polycrystalline-Si/Al[sub 2]O[sub 3]/Si metal–oxide–semiconductor structures

Cho, Heung-Jae, Park, Dae-Gyu, Lim, Kwan-Yong, Ko, Jung-Kyu, Yeo, In-Seok, Park, Jin Won, Roh, Jae-Sung

Журнал:

Рік:

2002

Мова:

english

Файл:

PDF, 320 KB

english, 2002

Epitaxial C49–TiSi[sub 2] phase formation on the silicon (100)

Yang, Jun-Mo, Park, Ju-Chul, Park, Dae-Gyu, Lim, Kwan-Yong, Lee, Soun-Young, Park, Sung-Wook, Kim, Youn-Joong

Журнал:

Рік:

2003

Мова:

english

Файл:

PDF, 1.20 MB

english, 2003

Characteristics of n[sup +] polycrystalline-Si/Al[sub 2]O[sub 3]/Si metal–oxide– semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH[sub 3])[sub 3] and H[sub 2]O vapor

Park, Dae-Gyu, Cho, Heung-Jae, Lim, Kwan-Yong, Lim, Chan, Yeo, In-Seok, Roh, Jae-Sung, Park, Jin Won

Журнал:

Рік:

2001

Мова:

english

Файл:

PDF, 348 KB

english, 2001

Characteristics of Si3N4/Si/n-GaAs metal-insulator-semiconductor interfaces grown on GaAs(111)B substrate

Park, Dae-Gyu, Diatezua, Deda M., Chen, Zhi, Mohammad, S. Noor, Morkoç, Hadis

Журнал:

Рік:

1996

Мова:

english

Файл:

PDF, 265 KB

english, 1996

Work function and thermal stability of Ti[sub 1−x]Al[sub x]N[sub y] for dual metal gate electrodes

Cha, Tae-Ho, Park, Dae-Gyu, Kim, Tae-Kyun, Jang, Se-Aug, Yeo, In-Seok, Roh, Jae-Sung, Park, Jin Won

Журнал:

Рік:

2002

Мова:

english

Файл:

PDF, 328 KB

english, 2002

On the inversion in GaAs metal-insulator-semiconductor heterostructures

Chen, Zhi, Noor. Mohammad, S., Park, Dae-Gyu, Morkoç, Hadis, Chang, Yia-Chung

Журнал:

Park, Dae-Gyu, Reed, J. C., Morkoç, Hadis

Рік:

1997

Мова:

english

Файл:

PDF, 281 KB

english, 1997

Minority-carrier characteristics of SiN[sub x]/GaAs metal–insulator–semiconductor structures with Si/Ge interlayers

Журнал:

Рік:

1997

Мова:

english

Файл:

PDF, 252 KB

english, 1997

Retarded C54 transformation and suppressed agglomeration by precipitates in TiSi[sub 2] films

Suh, You-Seok, Park, Dae-Gyu, Jang, Se-Aug, Lee, Sang-Hyeob, Kim, Tae-Kyun, Yeo, In-Seok, Kim, Sam-Dong, Kim, Chung-Tae

Журнал:

Рік:

2000

Мова:

english

Файл:

PDF, 604 KB

english, 2000

[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - Hysteretic drain-current behavior due to random telegraph noise in Scaled-down FETs with high-κ/metal-gate stacks

Miki, Hiroshi, Tega, Naoki, Ren, Zhibin, D'Emic, Christopher P., Zhu, Yu, Frank, David J., Guillorn, Michael A., Park, Dae-Gyu, Haensch, Wilfried, Torii, Kazuyoshi

Рік:

2010

Мова:

english

Файл:

PDF, 679 KB

english, 2010

[IEEE 2011 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2011.04.10-2011.04.14)] 2011 International Reliability Physics Symposium - Impact of HK / MG stacks and future device scaling on RTN

Tega, Naoki, Miki, Hiroshi, Ren, Zhibin, D'Emic, Christoper P., Zhu, Yu, Frank, David J., Guillorn, Michael A., Park, Dae-Gyu, Haensch, Wilfried, Torii, Kazuyoshi

Рік:

2011

Мова:

english

Файл:

PDF, 1.47 MB

english, 2011

Boron penetration in p[sup +] polycrystalline-Si/Al[sub 2]O[sub 3]/Si metal–oxide–semiconductor system

Park, Dae-Gyu, Cho, Heung-Jae, Yeo, In-Seok, Roh, Jae-Sung, Hwang, Jeong-Mo

Журнал:

Park, Dae-Gyu, Chen, Zhi, Botchkarev, Andrei E., Mohammad, S. Noor, Morkoç, Hadis

Рік:

2000

Мова:

english

Файл:

PDF, 383 KB

english, 2000

[Japan Soc. Appl. Phys 2001 Symposium on VLSI Technology. Digest of Technical Papers - Kyoto, Japan (12-14 June 2001)] 2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184) - Novel damage-free direct metal gate process using atomic layer deposition

Dae-Gyu Park,, Kwan-Yong Lim,, Heung-Jae Cho,, Tae-Ho Cha,, Joong-Jung Kim,, Jung-Kyu Ko,, Ins-Seok Yeo,, Jin Won Park,

Рік:

2001

Мова:

english

Файл:

PDF, 243 KB

english, 2001

[IEEE International Electron Devices Meeting. Technical Digest - Washington, DC, USA (2-5 Dec. 2001)] International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) - Robust ternary metal gate electrodes for dual gate CMOS devices

Dae-Gyu Park,, Tae-Ho Cha,, Kwan-Yong Lim,, Heung-Jae Cho,, Tae-Kyun Kim,, Se-Aug Jang,, You-Seok Suh,, Veena Misra,, In-Seok Yeo,, Jae-Sung Roh,, Jin Won Park,, Hee-Koo Yoon,

Рік:

2001

Мова:

english

Файл:

PDF, 349 KB

english, 2001

Interface properties of Si 3 N 4 Si/n-GaAs metal-msulator-semiconductor structure using a Si interlayer

Журнал:

Philosophical Magazine B

Рік:

1996

Мова:

english

Файл:

PDF, 953 KB

english, 1996

ECS Transactions [ECS 217th ECS Meeting - Vancouver, Canada (April 25 - April 30, 2010)] - (Invited) High-k Gate Dielectrics for Nanoscale CMOS Devices: Status, Challenges, and Future

Park, Dae-Gyu, Wang, Xinlin

Рік:

2010

Мова:

english

Файл:

PDF, 973 KB

english, 2010

Thermal Stability of TaSi[sub x]N[sub y] Films Deposited by Reactive Sputtering on SiO[sub 2]

Suh, You-Seok, Heuss, Greg P., Misra, Veena, Park, Dae-Gyu, Lim, Kwan-Yong

Журнал:

Рік:

2003

Мова:

english

Файл:

PDF, 487 KB

english, 2003

Effects of the Process Variable on Sputtered TiSi[sub x] Polycide Gate Electrodes for sub-0.15 μm Memory Device Application

Kim, Sam-Dong, Hwang, In-Seok, Rhee, Jin-Koo, Suh, You-Seok, Park, Dae-Gyu

Журнал:

Park, Dae-Gyu, Chudzik, Mike, Yin, Haizhou

Рік:

2001

Мова:

english

Файл:

PDF, 383 KB

english, 2001

[ECS 212th ECS Meeting - Washington, DC (October 7 - October 12, 2007)] ECS Transactions - Challenges in FEOL Logic Device Integration for 32 nm Technology Node and Beyond

Рік:

2007

Мова:

english

Файл:

PDF, 292 KB

english, 2007

Electrical and Structural Properties of Nanolaminate (Al 2 O 3 /ZrO 2 /Al 2 O 3 ) for Metal Oxide Semiconductor Gate Dielectric Applications

Jeon, Sanghun, Yang, Hyundoek, Park, Dae-Gyu, Hwang, Hyunsang

Журнал:

Рік:

2002

Мова:

english

Файл:

PDF, 237 KB

english, 2002

Effects of TiN Deposition on the Characteristics of W/TiN/SiO[sub 2]/Si Metal Oxide Semiconductor Capacitors

Park, Dae-Gyu, Cho, Heung-Jae, Lim, Kwan-Yong, Cha, Tae-Ho, Yeo, In-Seok, Park, Jin Won

Журнал:

Рік:

2001

Мова:

english

Файл:

PDF, 193 KB

english, 2001

Reliability Characteristics of W/WN/TaO[sub x]N[sub y]/SiO[sub 2]/Si Metal Oxide Semiconductor Capacitors

Cho, Heung-Jae, Cha, Tae-Ho, Lim, Kwan-Yong, Park, Dae-Gyu, Kim, Jae-Young, Kim, Joong-Jung, Heo, Sung, Yeo, In-Seok, Park, Jin Won

Журнал:

Рік:

2002

Мова:

english

Файл:

PDF, 190 KB

english, 2002

Characteristics of TaO x N y Gate Dielectric with Improved Thermal Stability

Cho, Heung-Jae, Park, Dae-Gyu, Yeo, In-Seok, Roh, Jae-Sung, Park, Jin Won

Журнал:

Рік:

2001

Мова:

english

Файл:

PDF, 220 KB

english, 2001

Position Dependent Stress Distribution of Indium-Tin-Oxide on Polymer Substrate by Applying External Bending Force

Park, Jun-Baek, Hwang, Jeoung-Yeon, Seo, Dae-Shik, Park, Sung-Kyu, Moon, Dae-Gyu, Han, Jeong-In

Журнал:

Рік:

2004

Мова:

english

Файл:

PDF, 256 KB

english, 2004

Characteristics of Multiple Thickness Gate Oxides Using Oxidation Enhancement by Si Implantation

Cho, Heung-Jae, Lim, Kwan-Yong, Lee, Jeong-Youb, Park, Dae-Gyu, Yeo, In-Seok, Lee, Jung-Ho, Roh, Jae-Sung

Журнал: